1D electronics in van der Waals 1D crystals
We are intrigued by a novel category of crystal materials referred to as van der Waals 1D materials. These crystals exhibit three-dimensional structures composed of parallel, infinitely long, straight molecular chains. Unlike traditional covalent connections within each chain, the chains are bound together in parallel by weaker interactions, including van der Waals bonds.
We anticipate that the electron coupling between these chains will be significantly weaker compared to the coupling within each individual chain. The unique atomic or molecular chain structures of these materials provide an ideal platform for investigating electron transport behaviors in one-dimensional physical systems. This exploration encompasses the study of conductivity influenced by Luttinger liquid behavior, spin-charge separation, and strong electron-electron interactions.
We are intrigued by a novel category of crystal materials referred to as van der Waals 1D materials. These crystals exhibit three-dimensional structures composed of parallel, infinitely long, straight molecular chains. Unlike traditional covalent connections within each chain, the chains are bound together in parallel by weaker interactions, including van der Waals bonds.
We anticipate that the electron coupling between these chains will be significantly weaker compared to the coupling within each individual chain. The unique atomic or molecular chain structures of these materials provide an ideal platform for investigating electron transport behaviors in one-dimensional physical systems. This exploration encompasses the study of conductivity influenced by Luttinger liquid behavior, spin-charge separation, and strong electron-electron interactions.
High temperature superconductivity at 2D limit
The mechanism by which Cooper pairs form in high-temperature superconductors remains an elusive question. The presence of electrons with numerous degrees of freedom, encompassing charge, spin, and notably three-dimensional momentum, complicates the exploration and understanding of the fundamentals of superconductivity.
To address this challenge, we are investigating the superconducting properties of the same materials in their two-dimensional (2D) limit. This involves reducing the thickness of the bulk crystal to the atomic level, essentially creating a 2D atomic crystal. This approach allows us to explore a range of unprecedented properties, including the quantum metallic state, the Berezinskii-Kosterlitz-Thouless (BKT) transition of glass states, and the electrostatic gating of phase transitions. Through this 2D perspective, we aim to shed light on the intricacies of superconductivity in high-temperature materials and unravel the mysteries surrounding Cooper pair formation.
The mechanism by which Cooper pairs form in high-temperature superconductors remains an elusive question. The presence of electrons with numerous degrees of freedom, encompassing charge, spin, and notably three-dimensional momentum, complicates the exploration and understanding of the fundamentals of superconductivity.
To address this challenge, we are investigating the superconducting properties of the same materials in their two-dimensional (2D) limit. This involves reducing the thickness of the bulk crystal to the atomic level, essentially creating a 2D atomic crystal. This approach allows us to explore a range of unprecedented properties, including the quantum metallic state, the Berezinskii-Kosterlitz-Thouless (BKT) transition of glass states, and the electrostatic gating of phase transitions. Through this 2D perspective, we aim to shed light on the intricacies of superconductivity in high-temperature materials and unravel the mysteries surrounding Cooper pair formation.
Metal insulator phase transition in strongly correlated oxides
Strongly correlated oxides, such as vanadium dioxide and niobium dioxide, which undergoes a structural transformation from rutile to monoclinic and a metal-to-insulator transition (MIT), is an example of a strongly correlated electron system. Conductivity can differ by three or four orders of magnitude. Due to the interplay of electrical and structural changes, it remains challenging to understand the transition mechanism. To gain new insights into the transition process, we are interested in the search for tuning parameters besides pressure and temperature that can aid in separating the electrical and structural phase transitions.
Strongly correlated oxides, such as vanadium dioxide and niobium dioxide, which undergoes a structural transformation from rutile to monoclinic and a metal-to-insulator transition (MIT), is an example of a strongly correlated electron system. Conductivity can differ by three or four orders of magnitude. Due to the interplay of electrical and structural changes, it remains challenging to understand the transition mechanism. To gain new insights into the transition process, we are interested in the search for tuning parameters besides pressure and temperature that can aid in separating the electrical and structural phase transitions.
Probing novel boundary states in topological materials
Topological materials exhibit electrical properties that benefit from protection by crystal symmetry and energy band topology. As a result, the electrical characteristics stemming from the topological (non-trivial) band structure are notably more robust than those observed in conventional materials. This robustness is further underscored by the emergence of new two-dimensional surface states in three-dimensional topological materials.
Our primary focus involves the investigation of these novel two-dimensional surface states. To achieve this, we employ a synergistic approach that combines nanofabrication techniques with precise electrical transport measurements. By doing so, we aim to gain a comprehensive understanding of the unique electronic behaviors exhibited by these surface states, paving the way for potential advancements in electronic applications and technology.
Topological materials exhibit electrical properties that benefit from protection by crystal symmetry and energy band topology. As a result, the electrical characteristics stemming from the topological (non-trivial) band structure are notably more robust than those observed in conventional materials. This robustness is further underscored by the emergence of new two-dimensional surface states in three-dimensional topological materials.
Our primary focus involves the investigation of these novel two-dimensional surface states. To achieve this, we employ a synergistic approach that combines nanofabrication techniques with precise electrical transport measurements. By doing so, we aim to gain a comprehensive understanding of the unique electronic behaviors exhibited by these surface states, paving the way for potential advancements in electronic applications and technology.